STH260N4LF7-2 datasheet(4/17 Pages) STMICROELECTRONICS

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Electrical characteristics

STH260N4LF7-2, STH260NL4F7-6

4/17

DocID028261 Rev 3

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 250 µA, VGS= 0 V

IDSS

Zero gate voltage

drain current

VDS = 40 V, VGS = 0 V

µA

VDS = 40 V, TC = 125 °C

VGS = 0 V

100

µA

IGSS

Gate-body leakage

current

VDS = 0, VGS = +20 V

±100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

1.2

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 55 A

1.2

1.6

mΩ

VGS= 4.5 V, ID = 55 A

1.5

1.9

mΩ

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 20 V, f = 1 MHz,

VGS = 0

7900

Coss

Output capacitance

2185

Crss

Reverse transfer

capacitance

-78-

Total gate charge

VDD = 20 V, ID =180 A,

VGS = 4.5 V

(see Figure 3)

-52-

Qgs

Gate-source charge

Qgd

Gate-drain charge

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 20 V, ID = 90 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 7)

-44-

Rise time

td(off)

Turn-off delay time

171

Fall time

Obsolete

Product(s)

- Obsolete

Product(s)

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