STL11N60M2-EP datasheet(4/15 Pages) STMICROELECTRONICS

Part #	STL11N60M2-EP

Description	N-channel 600 V, 0.600 Ω typ., 5.5 A MDmesh™ M2 EP Power MOSFET in a PowerFLAT™ 5x6 HV package

PDF	15 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 15 page

Table 7. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 300 V, ID = 3.75 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 14. Test circuit for

resistive load switching times

and Figure 19. Switching time

waveform)

Rise time

5.5

td(off)

Turn-off-delay time

Fall time

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

5.5

ISDM (1)

Source-drain current (pulsed)

VSD (2)

Forward on voltage

VGS = 0 V, ISD = 5.5 A

1.6

trr

Reverse recovery time

ISD = 7.5 A, di/dt = 100 A/µs,

VDD = 60 V

(see Figure 16. Test circuit for

inductive load switching and

diode recovery times)

192

Qrr

Reverse recovery charge

1.32

µC

IRRM

Reverse recovery current

13.8

trr

Reverse recovery time

ISD = 7.5 A, di/dt = 100 A/µs,

VDD = 60 V,

Tj = 150 °C

(see Figure 16. Test circuit for

inductive load switching and

diode recovery times)

262

Qrr

Reverse recovery charge

1.74

µC

IRRM

Reverse recovery current

13.3

1. Pulse width is limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

STL11N60M2-EP

Electrical characteristics

DS11604 - Rev 3

page 4/15

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