STL50N6F7 datasheet(4/14 Pages) STMICROELECTRONICS

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Electrical characteristics

STL50N6F7

4/14

DocID028126 Rev 2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4: On/Off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

ID = 1 mA, VGS = 0 V

IDSS

Zero gate voltage

drain current

VGS = 0 V

VDS = 60 V

µA

IGSS

Gate-body leakage

current

VGS = 20 V, VDS = 0 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID

= 250 μA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 7.5 A

mΩ

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 30 V, f = 1 MHz,

VGS = 0 V

1035

Coss

Output capacitance

450

Crss

Reverse transfer

capacitance

Total gate charge

VDD = 30 V, ID = 15 A,

VGS = 10 V (see Figure 14: "Test

circuit for gate charge behavior")

Qgs

Gate-source charge

5.7

Qgd

Gate-drain charge

5.7

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 30 V, ID = 7.5 A,

= 4.7 Ω, VGS = 10 V (see

Figure 13: "Test circuit for

resistive load switching times")

14.5

Rise time

15.3

td(off)

Turn-off delay time

19.4

Fall time

Table 7: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VSD(1)

Forward on voltage

ISD = 15 A, VGS = 0 V

1.2

trr

Reverse recovery time

ID = 15 A, di/dt = 100 A/µs

VDD = 48 V (see Figure 15: "Test

circuit for inductive load

switching and diode recovery

times"

26.8

Qrr

Reverse recovery

charge

14.2

IRRM

Reverse recovery

current

1.06

Notes:

(1)Pulsed: pulse duration = 300 µs, duty cycle 1.5%

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