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STL8N6LF3 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STL8N6LF3
Description  Automotive-grade N-channel 60 V, 22.5 mΩ typ., 7.8 A STripFET™ F3 Power MOSFET in a PowerFLAT™ 5x6 package
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL8N6LF3 Datasheet(HTML) 5 Page - STMicroelectronics

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STL8N6LF3
Electrical characteristics
DocID027037 Rev 3
5/15
Table 7: Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain current
-
7.8
A
ISDM(1)
Source-drain current
(pulsed)
-
31.2
A
VSD(2)
Forward on voltage
IDS = 7.8 A, VGS = 0 V
-
1.3
V
trr
Reverse recovery time
ISD = 7.8 A, di/dt = 100 A/µs
VDD = 48 V, Tj = 150 °C (see
Figure 15: "Test circuit for
inductive load switching and
diode recovery times")
-
30
ns
Qrr
Reverse recovery charge
-
35
nC
IRRM
Reverse recovery current
-
2.35
A
Notes:
(1)Pulse width limited by safe operating area.
(2)Pulsed: pulse duration = 300 μs, duty cycle 1.5 %.



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