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STM32L010C6 Datasheet(PDF) 45 Page - STMicroelectronics |
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STM32L010C6 Datasheet(HTML) 45 Page - STMicroelectronics |
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45 / 89 page ![]() DS12324 Rev 3 45/89 STM32L010C6 Electrical characteristics 81 Figure 9. IDD vs VDD, Run mode, code running from Flash memory, Range 2, HSE bypass, 1 ws MSv48118V1 Table 21. Current consumption in Run mode, code with data processing running from RAM Symbol Parameter Conditions fHCLK (MHz) Typ Max(1) Unit IDD (Run from RAM) Supply current in Run mode, code executed from RAM, Flash memory switched OFF fHSE = fHCLK up to 16 MHz, included fHSE = fHCLK/2 above 16 MHz (PLL ON)(2) Range 3, VCORE =1.2 V, VOS[1:0] = 11 1 115 170 µA 2 210 250 4 385 420 Range 2, VCORE = 1.5 ,V, VOS[1:0] = 10 4 0.48 0.6 mA 8 0.935 1.1 16 1.8 2 Range 1, VCORE =1.8 V, VOS[1:0] = 01 81.1 1.3 16 2.1 2.3 32 4.5 4.7 MSI clock Range 3, VCORE =1.2 V, VOS[1:0] = 11 0.065 22 52 µA 0.524 70.5 91 4.2 420 450 IDD (Run from RAM) Supply current in Run mode, code executed from RAM, Flash memory switched OFF HSI16 clock source (16 MHz) Range 2, VCORE =1.5 V, VOS[1:0] = 10 16 1.95 2.2 mA Range 1, VCORE =1.8 V, VOS[1:0] = 01 32 4.7 5.1 1. Guaranteed by characterization results at 85 °C, not tested in production, unless otherwise specified. |
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