| Electronic Components Datasheet Search |
|
STP15810 Datasheet(PDF) 5 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STP15810 Datasheet(HTML) 5 Page - STMicroelectronics |
|
5 / 13 page ![]() DocID024972 Rev 4 5/13 STP15810 Electrical characteristics 13 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 110 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 440 A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. Forward on voltage ISD = 110 A, VGS = 0 - 1.2 V trr Reverse recovery time ISD = 110 A, di/dt = 100 A/µs VDD = 80 V, TJ=150 °C (see Figure 15) -70 ns Qrr Reverse recovery charge - 165 nC IRRM Reverse recovery current - 4.7 A |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |