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STP160N4LF6 Datasheet(PDF) 6 Page - STMicroelectronics |
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STP160N4LF6 Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 14 page ![]() Electrical characteristics STP160N4LF6 6/14 DocID026266 Rev 1 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance ID 10 1 0.1 0.1 1 VDS(V) 10 (A) Operation in this area is Limited by max R DS(on) 10ms 1ms 100 µs Tj=175°C Tc=25°C Single pulse 100 AM15806v1 Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance ID 150 100 50 0 0 0.4 VDS(V) (A) 0.2 200 VGS= 3 V VGS= 6, 7, 8, 9, 10 V 250 VGS= 4 V VGS= 5 V 0.6 0.8 AM15797v1 ID 150 100 50 0 0 2 VGS(V) 4 (A) 200 6 VDS= 0.6V 8 250 AM15798v1 VGS 6 4 2 0 0 50 Qg(nC) (V) 8 100 150 10 VDD=20V 200 12 ID=60V AM15799v1 RDS(on) 1.9 1.8 1.7 30 ID(A) (m Ω) 10 50 2.0 2.1 20 40 60 VGS=10V 2.2 70 AM15800v2 |
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