STP17N80K5

Electrical characteristics

DocID027702 Rev 2

5/13

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD= 400 V, ID =7 A, RG = 4.7 Ω

VGS = 10 V

(see Figure 14: "Test circuit for

resistive load switching times"

and Figure 19: "Switching time

waveform")

-

14.8

-

ns

tr

Rise time

-

10.8

-

ns

td(off)

Turn-off delay time

-

84.3

-

ns

tf

Fall time

-

10.1

-

ns

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

14

A

ISDM

(1)

Source-drain current

(pulsed)

-

56

A

VSD

(2)

Forward on voltage

ISD = 14 A, VGS = 0 V

-

1.6

V

trr

Reverse recovery time

ISD = 14 A, di/dt = 100 A/µs,

VDD = 60 V

(see Figure 16: "Test circuit for

inductive load switching and

diode recovery times")

-

439

ns

Qrr

Reverrse recovery

charge

-

6.37

µC

IRRM

Reverse recovery

current

-

29

A

trr

Reverse recovery time

ISD = 14 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C

(see Figure 16: "Test circuit for

inductive load switching and

diode recovery times")

-

626

ns

Qrr

Reverse recovery

charge

-

8.36

µC

IRRM

Reverse recovery

current

-

26.7

A

Notes:

(1)

Pulse width limited by safe operating area

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Table 9: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)GSO

Gate-source breakdown voltage

IGS= ± 1 mA, ID= 0 A

30

-

-

V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD

performance of the device. The Zener voltage facilitates efficient and cost-effective device

integrity protection, thus eliminating the need for additional external componentry.