STP3LN80K5, STU3LN80K5

Electrical characteristics

DocID027716 Rev 2

5/15

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 400 V, ID = 1 A, RG = 4.7

Ω,

VGS = 10 V ( see Figure 16: "Test

circuit for resistive load switching

times" and Figure 21: "Switching

time waveform" )

-

6.2

-

ns

tr

Rise time

-

7

-

ns

td(off)

Turn-off delay time

-

30

-

ns

tf

Fall time

-

26

-

ns

Table 8: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

2

A

ISDM(1)

Source-drain current

(pulsed)

-

8

A

VSD(2)

Forward on voltage

ISD = 2 A, VGS = 0 V

-

1.5

V

trr

Reverse recovery time

ISD = 2 A, di/dt = 100 A/µs,

VDD = 60 V ( see Figure 18: "Test

circuit for inductive load switching

and diode recovery times" )

-

210

ns

Qrr

Reverse recovery

charge

-

0.8

µC

IRRM

Reverse recovery

current

-

7.6

A

trr

Reverse recovery time

ISD = 2 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C, (see

Figure 18: "Test circuit for

inductive load switching and diode

recovery times" )

-

345

ns

Qrr

Reverse recovery

charge

-

1.2

µC

IRRM

Reverse recovery

current

-

7.2

A

Notes:

(1)Pulse width limited by safe operating area.

(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

Table 9: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)GSO

Gate-source breakdown voltage

IGS = ± 1 mA, ID = 0 A

30

-

-

V

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD

performance of the device. The Zener voltage facilitates efficient and cost-effective device

integrity protection, thus eliminating the need for additional external componentry.