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STP8N120K5 Datasheet(PDF) 6 Page - STMicroelectronics

Part # STP8N120K5
Description  N-channel 1200 V, 1.65 Ω typ., 6 A, MDmesh K5 Power MOSFET in a TO-220 package
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP8N120K5 Datasheet(HTML) 6 Page - STMicroelectronics

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Figure 7. Capacitance variations
GADG030420180840CVR
10 3
10 2
10 1
10 0
10 -1
10 -2
10 -1
10 0
10 1
10 2
C
(pF)
VDS (V)
CISS
COSS
CRSS
f = 1 MHz
Figure 8. Normalized gate threshold voltage vs
temperature
GADG040420181102VTH
1.2
1
0.8
0.6
0.4
-75
-25
25
75
125
VGS(th)
(norm.)
Tj (°C)
ID = 100 µA
Figure 9. Normalized on-resistance vs temperature
GADG040420181103RON
2.5
2
1.5
1
0.5
0
-75
-25
25
75
125
RDS(on)
(norm.)
Tj (°C)
VGS = 10 V
Figure 10. Normalized V(BR)DSS vs temperature
GADG040420181102BDV
1.12
1.08
1.04
1
0.96
0.92
0.88
-75
-25
25
75
125
V(BR)DSS
(norm.)
Tj (°C)
ID = 1 mA
Figure 11. Source-drain diode forward characteristics
GADG040420181103SDF
0.9
0.8
0.7
0.6
0.5
0
1
2
3
4
5
VSD
(V)
ISD (A)
Tj = -50 °C
Tj = 25 °C
Tj = 150 °C
Figure 12. Maximum avalanche energy vs starting TJ
GADG040420181104EAS
400
300
200
100
0
-75
-25
25
75
125
EAS
(mJ)
TJ (°C)
ID = 1.7 A, VDD = 50 V
Single pulse,
STP8N120K5
Electrical characteristics (curves)
DS12529 - Rev 3
page 6/13



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