Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

TSSSETUP

Soft-start set-up time

Delay from UVLO rising to switching activity

(2)

640

µs

ISS CH

CSS charging current

VSS=0

4.3

5.0

5.7

mA

Error amplifier

VFB

Voltage feedback

Tj = 25 °C

0.792 0.800 0.808

V

VFB

Voltage feedback

0.788 0.800 0.812

V

VCOMPH

VFB=GND; VSS=3.2 V

3.00

3.35

3.65

V

VCOMPL

VFB=1 V; VSS=3.2 V

0.1

V

IFB

FB biasing current

VFB=3.6 V

5

50

nA

IOSOURCE

VFB=GND; SS pin floating; VCOMP=2 V

(2)

3.1

mA

IOSINK

Output stage sinking capability

Unity gain buffer configuration (FB connected to

COMP).COMP voltage variation due to IOSINK injection

lower than ± 0.1·VFB

(2)

5

mA

AV0

Error amplifier gain

(2)

100

dB

GBWP

Unity gain buffer configuration (FB connected to COMP).

No load on COMP pin

(2)

23

MHz

Synchronization (fan out: 5 slave devices max.)

fSYN MIN

Synchronization frequency

FSW floating

280

kHz

VSYNOUT

Master output amplitude

ILOAD=4 mA

2.45

V

ILOAD=0 A; pin SYNCH floating

4.0

VSYNOW

Output pulse width

ILOAD=0 A; pin SYNCH floating

150

225

275

ns

VSYNIH

SYNCH slave high level input threshold

2.0

V

VSYNIL

SYNCH slave low level input threshold

1.0

V

ISYN

Slave SYNCH pull-down current

VSYNCH = 5 V

400

650

900

µA

VSYNIW

Input pulse width

150

ns

PGOOD

VPGDTH

PGOOD rising threshold

VFB rising

0.67

0.70

0.74

V

VPGDHYST

PGOOD hysteresis

VFB falling

(2)

30

mV

VPGDLOW

PGOOD low level

IPGOOD=1 mA, VFB=GND

30

mV

IPGDLKG

PGOOD leakage current

VPGOOD=61 V;VFB=0.8 V;

Tj = 25 °C

0.1

µA

VPGOOD=61 V;VFB=0.8 V

20

Thermal shutdown

TSHDWN

Thermal shutdown temperature

(2)

170

°C

THYS

Thermal shutdown hysteresis

(2)

15

°C

1. Parameter tested in a static condition during the testing phase. The parameter value may change over

dynamic application conditions.

2. Not tested in production.

A7987

Electrical characteristics

DS12928 - Rev 3

page 7/36