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STW3N170 Datasheet(PDF) 1 Page - STMicroelectronics |
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STW3N170 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() September 2015 DocID028045 Rev 1 1/14 This is information on a product in full production. www.st.com STW3N170, STWA3N170 N- channel 1700 V, 7 Ω typ., 2.6 A PowerMESH™ Power MOSFETs in TO-247 and TO-247 long leads packages Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STW3N170 1700 V 13 Ω 2.6 A 160 W STWA3N170 Intrinsic capacitances and Qg minimized High speed switching 100% avalanche tested Applications Switching applications Description This Power MOSFET is designed using the STMicroelectronics consolidated strip-layout- based MESH OVERLAY™ process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers. Table 1: Device summary Order code Marking Package Packing STW3N170 3N170 TO-247 Tube STWA3N170 TO-247 long leads |
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