1

Characteristics

Table 1. Absolute maximum ratings (limiting values), Tj = 25 °C unless otherwise specified

Symbol

Parameter

Value

Unit

VDRM/VRRM Repetitive peak off-state voltage (50-60 Hz)

Tj = 125 °C

800

V

Tj = 150 °C

600

V

VDSM/VRSM Non Repetitive peak off-state voltage

tp = 10 ms, Tj = 25 °C

900

V

IT(RMS)

RMS on-state current (full sine wave)

Tc = 126 °C

16

A

ITSM

Non repetitive surge peak on-state current (full cycle, Tj initial = 25

°C

t = 16.7 ms

126

A

t = 20 ms

120

I2t

I2t value for fusing

tp = 10 ms

95

A2s

dl/dt

Critical rate of rise of on-state current, IG = 2 x IGT, tr ≤ 100 ns

f = 100 Hz

100

A/µs

IGM

Peak gate current

tp = 20 µs, Tj = 150 °C

4

A

VGM

Peak Gate Voltage

5

V

PG(AV)

Average gate power dissipation

Tj = 150 °C

1

W

Tstg

Storage junction temperature range

-40 to +150

°C

Tj

Operating junction temperature range

-40 to +150

°C

Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Test conditions

Quadrants; Tj

Value

Unit

IGT(1)

VD = 12 V, RL = 30 Ω

I - II - III

Max.

10

mA

VGT

VD = 12 V, RL = 30 Ω

I - II - III

Max.

1.3

V

VGD

VD = 800 V, RL = 3.3 kΩ

Tj = 125 °C

I - II - III

Min.

0.2

V

IL

IG = 1.2 x IGT

I - III

Max.

20

mA

IG = 1.2 x IGT

II

Max.

30

mA

IH (2)

IT = 500 mA, gate open

Max.

25

mA

dV/dt (2)

VD = 536 V, gate open

Tj = 125 °C

Min.

100

V/µs

VD = 402 V, gate open

Tj = 150 °C

Min.

50

V/µs

(dl/dt)c (2)

(dV/dt)c = 0.1 V/μs

Tj = 125 °C

Min.

9

A/ms

Tj = 150 °C

5.4

(dV/dt)c = 10 V/μs

Tj = 125 °C

Min.

3

A/ms

Tj = 150 °C

1.8

1. Minimum IGT is guaranteed at 5% of IGT max

2. For both polarities of A2 referenced to A1.

T1610T-8G

Characteristics

DS12532 - Rev 3

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