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FF900R12IP4DV Datasheet(PDF) 7 Page - Infineon Technologies AG

Part # FF900R12IP4DV
Description  PrimePACK™2 module with Trench/Fieldstop IGBT4, enlarged Emitter Controlled 4 diode and NTC
PDF  9 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

FF900R12IP4DV Datasheet(HTML) 7 Page - Infineon Technologies AG

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TechnischeInformation/TechnicalInformation
FF900R12IP4DV
IGBT-Module
IGBT-modules
preparedby:TA
approvedby:DTS
dateofpublication:2013-11-26
revision:2.0
VorläufigeDaten
PreliminaryData
SchaltverlusteDiode,Wechselrichter(typisch)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=1.6
Ω,VCE=600V
IF [A]
0
200
400
600
800 1000 1200 1400 1600 1800
0
20
40
60
80
100
120
140
160
Erec, Tvj = 125°C
Erec, Tvj = 150°C
SchaltverlusteDiode,Wechselrichter(typisch)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=900A,VCE=600V
RG [
Ω]
0,0
2,0
4,0
6,0
8,0
10,0
12,0
14,0
16,0
0
20
40
60
80
100
120
140
Erec, Tvj = 125°C
Erec, Tvj = 150°C
TransienterWärmewiderstandDiode,Wechselrichter
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)
t [s]
0,001
0,01
0,1
1
10
0,1
1
10
100
ZthJC : Diode
i:
ri[K/kW]:
τi[s]:
1
3,1
0,0008
2
8,8
0,013
3
24,5
0,05
4
0,6
0,6
NTC-Widerstand-Temperaturkennlinie(typisch)
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
TC [°C]
0
20
40
60
80
100
120
140
160
100
1000
10000
100000
Rtyp



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