●Outline

VR

200

V

Io

2

A

IFSM

20

A

trr(Typ.)

14

ns

●Features

●Inner Circuit

Low forward voltage

Low switching loss

High current overload capacity

●Application

●Packaging Specifications

General rectification

Packing

Embossed Tape

Reel Size(mm)

180

Taping Width(mm)

8

●Structure

Quantity(pcs)

3000

Silicon epitaxial planar

Taping Code

TR

Marking

3F

●Absolute Maximum Ratings (Tc=25℃ unless otherwise specified)

　 　 　 　 　 　 　 　 　 　 　 　

Parameter

Symbol

Conditions

Limits

Unit

Repetitive peak reverse voltage

VRM

Duty≦0.5

200

V

Reverse voltage

VR

Reverse direct voltage

200

V

Average rectified forward current

Io

60Hz half sin wavef orm

resistive load

Tc=115℃

2

A

Peak forward surge current

IFSM

60Hz half sin wavef orm,

Non-repetitive,Tj=25℃

20

A

Junction temperature

Tj

-

175

℃

Storage temperature

Tstg

-

-55 ～ 175

℃

●Electrical Characteristics

(Tｊ=25℃ unless otherwise specified)

　 　 　 　 　 　 　 　 　 　 　 　

Parameter

Symbol

Conditions

Min. Typ. Max. Unit

Forward voltage

VF

IF=2A

0.80 0.92 0.99

V

Reverse current

IR

VR=200V

-

-

1

μA

Reverse recovery time

trr

IF=0.5A, IR=1.0A, Irr=0.25xIR

-

14

25

ns

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1/5

2022/01/24_Rev.001

RFN2VWM2S

Ultra Fast Recovery Diode

Data sheet