MAXIMUM RATINGS

G

D

S

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

mark of Infineon Technologies AG"

Super Junction MOSFET

C

Power Semiconductors

O

• Ultra low R

• Low Miller Capacitance

• Ultra Low Gate Charge, Q

g

• Avalanche Energy Rated

APT17N80BC3

APT17N80SC3

800V 17A

Ω

Ω

Ω

Ω

TO-247

Characteristic / Test Conditions

Drain-Source Breakdown Voltage (V

Zero Gate Voltage Drain Current (V

Zero Gate Voltage Drain Current (V

Gate-Source Leakage Current (V

Gate Threshold Voltage (V

Symbol

V

DSS

I

D

I

DM

V

GS

V

GSM

P

D

T

T

L

I

AR

E

AR

E

AS

Parameter

Drain-Source Voltage

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

Drain-Source Voltage slope (V

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

V/ns

Amps

mJ

STATIC ELECTRICAL CHARACTERISTICS

Symbol

BV

DSS

R

DS(on)

I

DSS

I

GSS

V

GS(th)

UNIT

Volts

Ohms

µA

nA

Volts

MIN

TYP

MAX

800

0.25

0.29

0.5

25

250

±100

2.10

3

3.9

APT17N80BC3_SC3

800

17

51

±20

±30

208

1.67

-55 to 150

300

50

17

0.5

670