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APTM20DHM16T Datasheet(PDF) 2 Page - Advanced Power Technology

Part # APTM20DHM16T
Description  Asymmetrical - Bridge MOSFET Power Module
PDF  6 Pages
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Manufacturer  ADPOW [Advanced Power Technology]
Direct Link  http://www.advpowertech.com
Logo ADPOW - Advanced Power Technology

APTM20DHM16T Datasheet(HTML) 2 Page - Advanced Power Technology

  APTM20DHM16T Datasheet HTML 1Page - Advanced Power Technology APTM20DHM16T Datasheet HTML 2Page - Advanced Power Technology APTM20DHM16T Datasheet HTML 3Page - Advanced Power Technology APTM20DHM16T Datasheet HTML 4Page - Advanced Power Technology APTM20DHM16T Datasheet HTML 5Page - Advanced Power Technology APTM20DHM16T Datasheet HTML 6Page - Advanced Power Technology  
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APTM20DHM16T
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 250µA
200
V
VGS = 0V,VDS= 200V
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS= 160V
Tj = 125°C
500
µA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 52A
16
m
W
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
7220
Coss
Output Capacitance
2330
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
146
pF
Qg
Total gate Charge
140
Qgs
Gate – Source Charge
53
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 100V
ID = 104A
67
nC
Td(on)
Turn-on Delay Time
32
Tr
Rise Time
64
Td(off)
Turn-off Delay Time
88
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 104A
RG = 5
W
116
ns
Eon
Turn-on Switching Energy
u
849
Eoff
Turn-off Switching Energy
v
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 104A, RG = 5Ω
929
µJ
Eon
Turn-on Switching Energy
u
936
Eoff
Turn-off Switching Energy
v
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 104A, RG = 5Ω
986
µJ
Diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 90°C
100
A
IF = 100A
1
1.1
IF = 200A
1.4
VF
Diode Forward Voltage
IF = 100A
Tj = 125°C
0.9
V
Tj = 25°C
60
trr
Reverse Recovery Time
IF = 100A
VR = 133V
di/dt = 200A/µs
Tj = 125°C
110
ns
Tj = 25°C
200
Qrr
Reverse Recovery Charge
IF = 100A
VR = 133V
di/dt = 200A/µs
Tj = 125°C
840
nC
u Eon includes diode reverse recovery.
v In accordance with JEDEC standard JESD24-1.



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