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MS1278 Datasheet(PDF) 1 Page - Advanced Power Technology |
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MS1278 Datasheet(HTML) 1 Page - Advanced Power Technology |
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1 / 4 page ![]() MS1278.PDF 5-28-03 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS1278 DESCRIPTION: DESCRIPTION: The MS1278 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in VHF and Band III television transmitters and transposers. ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 65 V VCEO Collector-Emitter Voltage 33 V VEBO Emitter-Base Voltage 3.5 V IC Device Current 16 A PDISS Power Dissipation 150 W TJ Junction Temperature +200 °°C TSTG Storage Temperature -65 to +150 °°C Thermal Data Thermal Data RTH(J-C) Thermal Resistance Junction-case 1.2 °°C/W Features Features • 170 - 230 MHz • 28 VOLTS • POUT = 100 WATTS • G P = 11.0 dB GAIN MINIMUM • GOLD METALLIZATION • COMMON EMITTER CONFIGURATION RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS |
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