APTM120A20D

APT website – http://www.advancedpower.com

1 – 6

OUT

VBUS

S1

G1

0/VBUS

G2

S2

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

Symbol

Parameter

Max ratings

Unit

Drain - Source Breakdown Voltage

1200

V

50

Continuous Drain Current

37

Pulsed Drain current

200

A

Gate - Source Voltage

±30

V

Drain - Source ON Resistance

200

m

Ω

Maximum Power Dissipation

1250

W

Avalanche current (repetitive and non repetitive)

12

A

Repetitive Avalanche Energy

30

Single Pulse Avalanche Energy

1300

mJ

Application

•

Zero Current Switching resonant mode

Features

•

-

-

Low input and Miller capacitance

-

Low gate charge

-

Fast intrinsic reverse diode

-

Avalanche energy rated

-

Very rugged

•

Kelvin source for easy drive

•

Very low stray inductance

-

Symmetrical design

-

M5 power connectors

•

High level of integration

Benefits

•

Outstanding performance at high frequency operation

•

Direct mounting to heatsink (isolated package)

•

Low junction to case thermal resistance

•

Low profile

Phase leg

with Series diodes

MOSFET Power Module