7.3.3 Dynamic Resistance

The I/O pins feature an ESD clamp that have a low RDYN of 0.48 Ω for the ESD1LIN24-Q1, 0.6 Ω for the

ESD751-Q1, and 0.58 Ω for the ESD761-Q1.

7.3.4 DC Breakdown Voltage

The DC breakdown voltage between the I/O pins is a minimum of ± 25.5 V. This shields sensitive equipment

from surges above the reverse standoff voltage of ± 24 V.

7.3.5 Ultra Low Leakage Current

The I/O pins feature an ultra-low leakage current of 50 nA (maximum) with a bias of ± 24 V.

7.3.6 Clamping Voltage

The I/O pins of the ESD1LIN24-Q1 feature an ESD clamp that is capable of clamping the voltage to 37 V ( IPP

= 4.3 A) and 37.7 V (IPP = 16 A for TLP). The I/O pins of the ESD751-Q1 feature an ESD clamp that is capable

of clamping the voltage to 36.5 V (IPP = 2.8 A) and 39.7 V (IPP = 16 A for TLP). The I/O pins of the ESD761-Q1

feature an ESD clamp that is capable of clamping the voltage to 36.3 V (IPP = 1.8 A) and 39.3 V (IPP = 16 A for

TLP).

7.3.7 Industry Standard Packages

The ESD1LIN24-Q1 and ESD751-Q1 feature industry standard SOD-323 (DYF) and SOD-523 (DYA) leaded

packages for automatic optical inspection (AOI). The ESD761-Q1 is offered in the leadless X1SON (DPY)

package

7.4 Device Functional Modes

The ESD1LIN24-Q1, ESD751-Q1, and ESD761-Q1 are single channel passive clamps that have low leakage

during normal operation when the voltage between I/O and GND is below VRWM, and activate when the voltage

between I/O and GND goes above VBR. During ISO 10605 ESD events, transient voltages from ±30 kV to ±15

kV can be clamped on either channel. When the voltages on the protected lines fall below the VHOLD, the device

reverts back to the low leakage passive state

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ESD1LIN24-Q1, ESD751-Q1, ESD761-Q1

SLVSGS4B – SEPTEMBER 2022 – REVISED NOVEMBER 2022

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Product Folder Links: ESD1LIN24-Q1 ESD751-Q1 ESD761-Q1