8.2.2 Detailed Design Procedure

The ESD751 and ESD761 have a VRWM of ±24 V to protect the diode from being damaged during a short

event that can occur when one of the USB-PD slower speed lines (CC1, CC2, SBU1, SBU2, D+, and D-) is

shorted to VBUS. The bidirectional characteristic ensures both positive and negative polarity are protected. The

low capacitance of 1.7 pF or less permits data rates up to 480 Mbps, which allows the designer to meet the

requirements for the D+ and D- signals. These devices have an IPP = 2.8 A and 1.8 A (8/20 µs), respectively.

The surge current capability of these devices is suitable for protecting the VBUS power rail.

8.2.2.1 Application Curves

Figure 8-2. +8-kV Clamped IEC Waveform

Figure 8-3. −8-kV Clamped IEC Waveform

9 Power Supply Recommendations

These devices are passive TVS diode-based ESD protection devices, therefore there is no requirement to power

them. Ensure that the maximum voltage specifications for each pin is not violated.

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ESD751, ESD761

SLVSH10B – NOVEMBER 2022 – REVISED DECEMBER 2022

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Product Folder Links: ESD751 ESD761