ESDALC6V1M6 datasheet(3/8 Pages) STMICROELECTRONICS

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ESDALC6V1xxM6

1 Characteristics

3/8

Figure 1.

Relative variation of peak pulse

power versus initial junction

temperature

Figure 2.

Peak pulse power versus

exponential pulse duration

Figure 3.

Clamping voltage versus peak pulse

current (typical values, rectangular

waveform)

Figure 4.

Forward voltage drop versus peak

forward current (typical values)

Figure 5.

Junction capacitance vesus reverse

voltage applied (typical values)

Figure 6.

Relative variation of leakage current

versus junction temperature (typical

values)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

100

125

150

init ial] /P

init ial= 2 5

]

j(°C)

°C

100

1000

100

PP(W)

j initial = 25°C

100

1000

100

PP(W)

j initial = 25°C

tP(µs)

0.1

1.0

10.0

100.0

1020

3040

PP(A)

8/20µs

j initial =25°C

0.1

1.0

10.0

100.0

1020

3040

PP(A)

8/20µs

j initial =25°C

VCL(V)

1.E-03

1.E-02

1.E-01

1.E+00

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

(A)

j =25°C

j =125°C

FM (V)

C(pF)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

F=1MHz

OSC=30mVRMS

j=25°C

VR(V)

100

125

]/ I

=2 5

]

R =3V

°C

T j(°C)

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