Protection IC Datasheet

© 2022 Littelfuse, Inc.

Specifications are subject to change without notice.

Revised: FW.12/01/22

LS2405IDD23

24V, 5A Very Low Forward Voltage Diode

Absolute Maximum Rating (Reference to GND)

* Notes:Stress exceeding those listed “Absolute Maximum Ratings” may damage the device.

Symbol

Value

Units

Supply Voltage IN, OUT, AOUT

-0.3 to +28

V

Control Pin EN

-0.3 to +28

V

Control Pin DISC

-0.3 to +6

V

ESD, Human Body Model (HBM)

±2000

V

Junction Temperature Range

-40 to +150

°C

Storage Temperature Range

-65 to +150

°C

Lead Temperature (Soldering 10s)

260

°C

Recommend Operating Conditions

Symbol

Value

Units

Supply Input Voltage, V

IN

+3 to +24

V

Operating Voltage, V

OUT

+2.7 to +24

V

Junction Temperature Range

-40 to +125

°C

* Notes: The device is not guaranteed to function outside of the recommended operating conditions.

Symbol

Value

Units

Maximum Power Dissipation (T

A=25°C )

1.4

W

Thermal Resistance (

θ

JA)

72.11

°C/W

Thermal Resistance (

θ

JC)

30.14

°C/W

Note1: Measured on JESD51-7, 4-Layer PCB.

Note 2: The maximum allowable power dissipation is a function of the maximum junction temperature T

J_MAX,

the junction to ambient thermal resistance

θ

JA, and the ambient temperature TA. The maximum allowable

continuous power dissipation at any ambient temperature is calculated by P

D_MAX= (TJ_MAX-TA)/θJA. Exceeding

the maximum allowable power dissipation will cause excessive die temperature, and the regulator will go into

thermal shutdown. Internal thermal shutdown circuitry protects the device from permanent damage.

Thermal information

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

V

IN

Input Voltage Range

2.7

24

V

I

IN

Quiescent Current

V

IN =5V, VEN=5V, IOUT=0

300

350

µA

I

AOUT

V

IN =0V, VOUT=VAOUT=VEN=5V, IOUT=0

90

µA

I

STBY

Standby Current

(Intenal MOSFET Disabled)

V

IN =24V, VEN=0V

4

6

µA

V

ENR

EN Turn-on Threshold

EN Rising

1.1

1.2

1.3

V

V

ENF

EN Turn-off Threshold

EN Falling

0.9

1.0

1.1

V

I

EN

EN Internal Pull up Current

V

EN =1.2V

0.1

0.5

µA

V

OUTR

Output UVLO Rising Threshold

AOUT=OUT, Output Rising

2.1

2.2

2.3

V

V

OUTF

Output UVLO Falling Threshold

AOUT=OUT, Output Falling

1.95

2.05

2.15

V

t

ON

MOSFET Turn-On Time

From EN Lo-to-Hi to MOSFET fully On

90

µs

t

OFF

MOSFET Turn-Off Time

From V

OUT-VIN>15mV to MOSFET off

300

ns

△VSD

Source-Drain Regulation Voltage

I

OUT=100mA

10

25

40

mV

△

V

REV

Source-Drain Reverse Current

Blocking Threshold Voltage

-15

mV

V

DIODE

N-Channel MOSFET Body diode

Forward Voltage Drop

V

IN=5V, VEN=0V, IOUT=100mA

0.6

0.8

V

R

DS(ON)

N-Channel MOSFET Ron

V

IN=VEN=5V, IOUT= 2A

35

mΩ

I

NCH_LKG

N-Channel MOSFET Leakage

Current

V

IN=VEN=0V, VOUT=24V, Measure IIN

1

10

µA

V

HI

DISC Logic Input High

1.2

V

V

LO

DISC Logic Input Low

0.4

V

R

DPD

DISC Internal Pull Down Resistor

700

1000

1300

kΩ

R

DISC

Input Voltage Discharge Resistor

V

IN=VDISC=5V, VEN=0V

50

100

Ω

Electrical Characteristics (T

A = +25°C, VIN=12V, OUT=AOUT=EN, CIN=COUT= 1µF, unless otherwise specified)