PD030

30

μm InGaAs Photodiode

FEATURES

•

Planar Structure

•

Very High Speed

•

Low Dark Current

•

Dielectric Passivation

•

100% Purge Burn-in

APPLICATIONS

•

10Gb/s Optical Receivers

•

Test and Measurement

PD030-003-0xx

Ceramic Sub-Mount

PD030-003-1xx

TO can Package

PRODUCT DESCRIPTION

The PD030 is an InGaAs photodiode with a

photosensitive region 30

μm in diameter. It is

intended for use in very high speed, low noise

communication systems (up to 10Gb/s data

rates) and for use in optical test and

measurement equipment.

Planar semiconductor design and dielectric

passivation provide low noise performance.

Reliability is assured by hermetic sealing and

100% purge burn-in (200°C, 15 hours, Vr = 20V).

The device can be assembled on a ceramic sub-

mount or in a TO can. It can be pigtailed with SC,

FC, or ST connectors (UPC or APC). It can also

be mounted in an SC, ST of FC receptacle.

Custom packages are an option.

ELECTRICAL CHARACTERISTICS

Table 1: Electrical Specifications

PARAMETER

MIN

TYP

MAX

UNIT

-

0.1

1.0

nA

Capacitance (Ceramic sub-mount)

(1)

-

0.27

0.32

pF

Capacitance (TO can)

(1)

-

0.4

0.5

pF

Responsivity at 1310nm (Ceramic sub-mount)

0.80

0.90

-

A/W

Responsivity at 1550nm (Ceramic sub-mount)

0.85

0.95

-

A/W

Responsivity at 1310nm (TO can)

0.80

0.85

-

A/W

Responsivity at 1550nm (TO can)

0.85

0.90

-

A/W

3dB bandwidth (50Ω) (Ceramic sub-mount)

(1)

9000

11000

-

MHz

3dB bandwidth (50Ω) (TO can)

(1)

5800

7200

-

MHz

Operating voltage

-

5

20

V

(1) 5V bias voltage