APM2701CG datasheet(2/13 Pages) ANPEC

2 / 13 page

Rev. A.1 - Jun., 2006

www.anpec.com.tw

APM2701CG

Absolute Maximum Ratings (T

A = 25°C unless otherwise noted)

Electrical Characteristics (T

A = 25°C unless otherwise noted)

Note:

*Surface Mounted on 1in2

pad area, t

≤ 10sec.

Symbol

Parameter

N Channel

P Channel

Unit

VDSS

Drain-Source Voltage

-20

VGSS

Gate-Source Voltage

±10

ID*

Continuous Drain Current

-1.5

IDM*

300

µs Pulsed Drain Current

VGS=±4.5V

-6

IS*

Diode Continuous Forward Current

-1

Maximum Junction Temperature

150

TSTG

Storage Temperature Range

-55 to 150

°C

TA=25°C

0.83

PD*

Power Dissipation

TA=100°C

0.3

RθJA*

Thermal Resistance-Junction to Ambient

150

°C/W

APM2701CG

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

Static Characteristics

VGS=0V, IDS=250

µA

N-Ch

BVDSS

Drain-Source Breakdown

Voltage

VGS=0V, IDS=-250

µA

P-Ch

-20

VDS=16V, VGS=0V

TJ=85°C

N-Ch

VDS=-16V, VGS=0V

-1

IDSS

Zero Gate Voltage Drain

Current

TJ=85°C

P-Ch

-30

µA

VDS=VGS, IDS=250µA

N-Ch

0.45

0.6

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=-250

µA

P-Ch

-0.45

-0.6

-1

N-Ch

±100

IGSS

Gate Leakage Current

VGS=±10V, VDS=0V

P-Ch

±100

VGS=4.5V, IDS=3A

N-Ch

VGS=-4.5V, IDS=-1.5A

P-Ch

145

190

VGS=2.5V, IDS=1.7A

N-Ch

110

RDS(ON)

Drain-Source On-State

Resistance

VGS=-2.5V, IDS=-1A

P-Ch

180

235

Ω

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