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APM2801B Datasheet(PDF) 3 Page - Anpec Electronics Coropration

Part # APM2801B
Description  P-Channel Enhancement Mode MOSFET with Schottky Diode
PDF  11 Pages
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Manufacturer  ANPEC [Anpec Electronics Coropration]
Direct Link  http://www.anpec.com.tw
Logo ANPEC - Anpec Electronics Coropration

APM2801B Datasheet(HTML) 3 Page - Anpec Electronics Coropration

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Copyright
© ANPEC Electronics Corp.
Rev. B.4 - Jun., 2005
www.anpec.com.tw
3
APM2801B
Electrical Characteristics (Cont.) (T
A = 25°C unless otherwise noted)
APM2801B
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
[MOSFET]
Dynamic Characteristics
b
Ciss
Input Capacitance
255
Coss
Output Capacitance
70
Crss
Reverse Transfer Capacitance
VGS=0V,
VDS=-20V,
Frequency=1.0MHz
45
pF
td(ON)
Turn-on Delay Time
6
10
Tr
Turn-on Rise Time
8
12
td(OFF)
Turn-off Delay Time
9.8
15
Tf
Turn-off Fall Time
VDD=-10V, RL=10Ω,
IDS=-1A, VGEN=-4.5V,
RG=6Ω
5
10
ns
Gate Charge Characteristics
b
Qg
Total Gate Charge
4
6
Qgs
Gate-Source Charge
0.6
Qgd
Gate-Drain Charge
VDS=-10V, VGS=-4.5V,
IDS=-1.5A
0.7
nC
[SBD]
VR
Reverse Voltage
IR=0.5mA
20
V
VF1
IF=10mA
0.4
V
VF2
Forward Voltage
IF=500mA
0.5
V
IR
Reverse Current
VR=15V
200
µA
C
b
Junction Capacitance
VR=10V,
Frequency=1.0MHz
45
pF
Notes:
a : Pulse test ; pulse width
≤ 300µs, duty cycle ≤ 2%.
b : Guaranteed by design, not subject to production testing.



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