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1PS59SB21 Datasheet(PDF) 3 Page - NXP Semiconductors |
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1PS59SB21 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page ![]() 1999 May 05 3 Philips Semiconductors Product specification Schottky barrier diode 1PS59SB21 ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. Note 1. Pulse test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SC-59 standard mounting conditions. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage see Fig.2 IF =10mA − 300 mV IF = 100 mA − 420 mV IF = 200 mA − 550 mV IR reverse current VR = 30 V; note 1; see Fig.3 − 15 µA VR =30V;Tj = 100 °C; note 1; see Fig.3 − 3 mA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.4 40 50 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W |
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