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CPD41 Datasheet(PDF) 1 Page - Central Semiconductor Corp |
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CPD41 Datasheet(HTML) 1 Page - Central Semiconductor Corp |
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1 / 2 page ![]() Central Semiconductor Corp. TM PROCESS CPD41 Switching Diode High Current Switching Diode Chip PRINCIPAL DEVICE TYPES 1N3600 1N4150 CMPD4150 Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å PROCESS DETAILS 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com GEOMETRY BACKSIDE CATHODE R2 (1-August 2002) GROSS DIE PER 4 INCH WAFER 29,250 |
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