2N1613 datasheet(4/8 Pages) PHILIPS

4 / 8 page

1997 Apr 11

Philips Semiconductors

Product speciﬁcation

NPN medium power transistor

2N1613

CHARACTERISTICS

Tamb =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =60V

−

IE = 0; VCB =60V; Tamb = 150 °C

−

µA

IEBO

emitter cut-off current

IC = 0; VEB =5V

−

hFE

DC current gain

IC = 0.1 mA; VCE =10V

−

IC = 10 mA; VCE = 10 V; note 1

−

IC = 10 mA; VCE = 10 V; Tamb = −55 °C20

−

IC = 150 mA; VCE = 10 V; note 1

120

IC = 500 mA; VCE = 10 V; note 1

−

VCEsat

collector-emitter saturation voltage IC = 150 mA; IB =15mA

−

1.5

VBEsat

base-emitter saturation voltage

IC = 150 mA; IB =15mA

−

1.3

collector capacitance

IE =ie = 0; VCB =10V

−

emitter capacitance

IC =ic = 0; VEB = 0.5 V

−

transition frequency

IC = 50 mA; VCE = 10 V; f = 100 MHz

−

MHz

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