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STW28N65M2 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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STW28N65M2 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc N-Channel Mosfet Transistor STW28N65M2 FEATURES · Drain Current : ID= 20A@ TC=25℃ · Drain Source Voltage : VDSS= 650V(Min) · Static Drain-Source On-Resistance : RDS(on) = 0.18Ω(Max) @ VGS= 10V · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Switching power supplies,converters,AC and DC motor controls. · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ± 25 V ID Drain Current-Continuous 20 A IDM Drain Current-Single Plused 80 A PD Total Dissipation @TC=25℃ 170 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.74 ℃ /W RJA Junction-to-Ambient 50 ℃ /W |
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