1997 Jun 19

3

Philips Semiconductors

Product specification

NPN medium power transistor

2N3019

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

140

V

collector-emitter voltage

open base

−

80

V

emitter-base voltage

open collector

−

7V

collector current (DC)

−

1A

peak collector current

−

1A

peak base current

−

200

mA

total power dissipation

−

800

mW

−

5W

storage temperature

−65

+150

°C

junction temperature

−

200

°C

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

in free air

218

K/W

thermal resistance from junction to case

35

K/W