CJF44H11 datasheet(1/4 Pages) CDIL

Part #	CJF44H11

Description	SILICON PLANAR POWER TRANSISTORS

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Manufacturer	CDIL [Continental Device India Limited]

Direct Link	http://www.cdilsemi.com

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SILICON PLANAR POWER TRANSISTORS

CJF44H11 NPN

CJF45H11 PNP

TO-220FP Fully Isolated

Plastic Package

General Purpose Power Amplification and Switching such as Output or Driver Stages

in Applications

ABSOLUTE MAXIMUM RATINGS.

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector Emitter Voltage

VCEO

80

V

Emitter Base Voltage

VEBO

5V

RMS Isolation Voltage ( for 1sec,R.H.

(1) VISOL (a)

3500

VRMS

<30%, TA=25ºC )

(b)

1500

VRMS

Collector Current -Continuous

IC

10

A

- Peak

20

A

Total Power Dissipation @ Tc=25ºC

PD

50

W

Derate Above 25ºC

1.67

W/ºC

Total Power Dissipation @ Ta=25ºC

PD

2W

Derate Above 25ºC

0.016

W/ºC

Operating and Storage Junction

Tj,Tstg

- 55 to +150

ºC

Temperature Range

THERMAL RESISTANCE

From Junction to Ambient

Rth (j-a)

62.5

ºC/W

From Junction to Case

Rth (j-c)

3.5

ºC/W

(1) RMS Isolation Voltage : (a) 3500 VRMS with Package in Clip Mounting Position (b) 1500 VRMS with Package

in Screw Mounting Position (for 1sec, R.H.<30% ,Ta=25ºC; Pulse Test: Pulse Width <300

µs, Duty Cycle<2%)

ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

MAX

UNIT

Collector Emitter sustaining Voltage

VCEO (sus)

IC=30mA, IB=0

80

V

Collector Cut off Current

ICES

VCE=Rated VCEO, VBE=0

1

µA

Emitter Cut off Current

IEBO

VEB=5V, IC=0

10

µA

Collector Emitter Saturation Voltage

VCE(Sat)

IC=8A, IB=0.4A

1.85

V

Base Emitter Saturation Voltage

VBE(Sat)

IC=8A, IB=0.8A

1.5

V

DC Current Gain

hFE

IC=2A, VCE=1V

60

IC=4A, VCE=1V

35

Continental Device India Limited

Data Sheet

Page 1 of 4

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

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