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SST39VF1601C Datasheet(PDF) 21 Page - Microchip Technology |
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SST39VF1601C Datasheet(HTML) 21 Page - Microchip Technology |
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21 / 38 page ![]() 2015-2018 Microchip Technology Inc. DS20005018B-page 21 SST39VF1601C/SST39VF1602C FIGURE 8-7: WE# CONTROLLED BLOCK-ERASE TIMING DIAGRAM FIGURE 8-8: WE# CONTROLLED SECTOR-ERASE TIMING DIAGRAM 1380 F32.0 ADDRESSES DQ15-0 WE# 555 2AA 2AA 555 555 XX55 XX30 XX55 XXAA XX80 XXAA BAX OE# CE# RY/BY# VALID SIX-BYTE CODE FOR BLOCK-ERASE TWP TBE TBY TBR Note: This device also supports CE# controlled Block-Erase operation. The WE# and CE# signals are interchangeable as long as minimum timings are met. (See Table 8-2). BAX = Block Address WP# must be held in proper logic state (VIL or VIH) 1µs prior to and 1µs after the command sequence. 1380 F28.0 ADDRESSES DQ15-0 WE# 555 2AA 2AA 555 555 XX55 XX50 XX55 XXAA XX80 XXAA SAX OE# CE# RY/BY# VALID SIX-BYTE CODE FOR SECTOR-ERASE TWP TSE TBY TBR Note: This device also supports CE# controlled Sector-Erase operation. The WE# and CE# signals are interchangeable as long as minimum timings are met. (See Table 8-2). SAX = Block Address WP# must be held in proper logic state (VIL or VIH) 1µs prior to and 1µs after the command sequence. |
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