1999 Apr 23

2

Philips Semiconductors

Product specification

NPN high-voltage transistors

2N5550; 2N5551

FEATURES

• Low current (max. 300 mA)

• High voltage (max. 160 V).

APPLICATIONS

• Switching and amplification in high voltage applications

such as telephony.

DESCRIPTION

NPN high-voltage transistor in a TO-92; SOT54 plastic

package. PNP complements: 2N5400 and 2N5401.

PINNING

PIN

DESCRIPTION

1

collector

2

base

3

emitter

Fig.1

Simplified outline (TO-92; SOT54)

and symbol.

3

2

MAM279

1

2

3

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

2N5550

−

160

V

2N5551

−

180

V

collector-emitter voltage

open base

2N5550

−

140

V

2N5551

−

160

V

emitter-base voltage

open collector

−

6V

collector current (DC)

−

300

mA

peak collector current

−

600

mA

peak base current

−

100

mA

total power dissipation

−

630

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C