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74AHCT1G79 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # 74AHCT1G79
Description  Single D-type flip-flop; positive-edge trigger
PDF  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74AHCT1G79 Datasheet(HTML) 2 Page - NXP Semiconductors

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1999 May 18
2
Philips Semiconductors
Product specification
Single D-type flip-flop; positive-edge trigger
74AHC1G79;
74AHCT1G79
FEATURES
• Symmetrical output impedance
• High noise immunity
• ESD protection:
HBM EIA/JESD22-A114-A
exceeds 2000 V;
MM EIA/JESD22-A115-A
exceeds 200 V
• Low power dissipation
• Balanced propagation delays
• Very small 5 pin package
• Output capability: standard.
DESCRIPTION
The 74AHC1G/AHCT1G79 is a
high-speed Si-gate CMOS device.
The 74AHC1G/AHCT1G79 provides
a single positive-edge triggered
D-type flip-flop.
Information on the data input is
transferred to the Q output on the
LOW-to-HIGH transition of the clock
pulse. The D input must be stable one
set-up time prior to the LOW-to-HIGH
clock transition for predictable
operation.
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level;
↑ = LOW-to-HIGH CP transition;
X = don’t care;
Q + 1 = state after the next
LOW-to-HIGH CP transition.
INPUTS
OUTPUT
CP
D
Q+1
↑
LL
↑
HH
LX
Q
QUICK REFERENCE DATA
GND = 0 V; Tamb =25 °C; tr =tf ≤ 3.0 ns.
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD =CPD × VCC2 × fi +(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V.
2. The condition is VI = GND to VCC.
PINNING
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
AHC1G
AHCT1G
tPHL/tPLH
propagation delay
CP to Q
CL =15pF;
VCC =5V
3.5
3.5
ns
CI
input capacitance
1.5
1.5
pF
CPD
power dissipation
capacitance
notes 1 and 2;
CL =50pF;
f = 1 Mhz
15
16
pF
PIN
SYMBOL
DESCRIPTION
1
D
data input
2
CP
clock pulse input
3
GND
ground (0 V)
4
Q
data output
5VCC
DC supply voltage



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