TPCP8607 datasheet(1/7 Pages) TOSHIBA

Part #	TPCP8607

Description	Bipolar Transistors Silicon PNP Epitaxial Type

PDF	7 Pages

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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TPCP8607

1

Bipolar Transistors Silicon PNP Epitaxial Type

TPCP8607

Start of commercial production

2023-01

1. Applications

•

High-Speed Switching

•

DC-DC Converters

2. Features

(1)

High DC current gain: hFE = 120 to 240 (VCE = -2 V, IC = -0.25 A)

(2)

Low collector-emitter saturation voltage: VCE(sat) = -0.32 V (max) (IC = -0.75 A, IB = -75 mA)

(3)

High-speed switching: tf = 65 ns (typ.) (IC = -0.75 A)

3. Packaging and Internal Circuit

PS-8

1. Emitter

2. Emitter

3. Emitter

4. Base

5. Collector

6. Collector

7. Collector

8. Collector

2023-01-16

Rev.2.0

Toshiba Electronic Devices & Storage Corporation

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