STTH30L06G datasheet(2/9 Pages) STMICROELECTRONICS

2 / 9 page

STTH30L06

2/9

Table 3: Absolute Ratings (limiting values)

Table 4: Thermal Resistance

Table 5: Static Electrical Characteristics

Pulse test:

* tp = 5 ms,

δ < 2%

** tp = 380 µs,

δ < 2%

To evaluate the conduction losses use the following equation: P = 0.95 x IF(AV) + 0.010 IF

(RMS)

Table 6: Dynamic Characteristics

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

600

IF(RMS) RMS forward voltage

IF(AV)

Average forward current

TO-220AC / TO-247

/ D2PAK / SOT-93

Tc = 125°C

δ = 0.5

DOP3I

Tc = 95°C

δ = 0.5

IFSM

Surge non repetitive forward current

tp = 10ms sinusoidal

160

Tstg

Storage temperature range

-65 to + 175

°C

Maximum operating junction temperature

175

°C

Symbol

Parameter

Value (max).

Unit

Rth(j-c)

Junction to case

TO-220AC / TO-247 / D2PAK / SOT-93

1.1

°C/W

DOP3I

1.7

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

IR *

Reverse leakage current Tj = 25°C

VR = VRRM

µA

Tj = 150°C

800

VF **

Forward voltage drop

Tj = 25°C

IF = 30A

1.55

Tj = 150°C

1.0

1.25

Symbol

Parameter

Test conditions

Min.

Typ Max.

Unit

trr

Reverse recovery

time

Tj = 25°C

IF = 0.5A Irr = 0.25A IR =1A

IF = 1A dIF/dt = 50 A/µs VR =30V

IRM

Reverse recovery

current

Tj = 125°C IF = 30A

VR = 400V

dIF/dt = 100 A/µs

11.5

tfr

Forward recovery

time

Tj = 25°C

IF = 30A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax

500

VFP

Forward recovery

voltage

Tj = 25°C

IF = 30A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax

2.5

STTH30L06G Datasheet(PDF) 2 Page - STMicroelectronics

STTH30L06G Datasheet(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL