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DD200KB160 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # DD200KB160
Description  Diode Module
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

DD200KB160 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
DD200KB160
Diode Module
FEATURES
·
High surge current capability
·
Isolated mounting base
·
High voltage ratings up to 1600V
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Battery charges
·
DC motor drives
·
Various rectifiers
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VRRM
Repetitive Peak Reverse Voltage
1600
V
IF(AV)
Average Forward Current
TC=100℃,
180° conduction, half sine wave
200
A
IF(RMS)
R.M.S. Forward Current
310
A
IFSM
Surge Forward Current
10ms,half sine wave,VR=0.6VRRM
5
KA
I2t
I2t for fusing
125
A2S*103
TJ
Junction Temperature
-40~150
℃
Tstg
Storage Temperature Range
-40~125
℃
Viso
Isolation Breakdown Voltage（R.M.S.） 50Hz,R.M.S,t=1min,Iiso:1mA(max)
2500
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.17
℃
/W


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