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THN5602F Datasheet(PDF) 1 Page - Tachyonics CO,. LTD

Part # THN5602F
Description  NPN SiGe RF POWER TRANSISTOR
PDF  6 Pages
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Manufacturer  TACHYONICS [Tachyonics CO,. LTD]
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Logo TACHYONICS - Tachyonics CO,. LTD

THN5602F Datasheet(HTML) 1 Page - Tachyonics CO,. LTD

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THN5602F
The THN5602F is a low cost, NPN medium power
SiGe HBT(Hetero-Junction Bipolar Transistor)
encapsulated in a plastic SOT-89 SMD package.
TheTHN5602Fcanbeusedasadriverdeviceor
an output device, depending on the specific app-
lication.
□ FEATURES
o 4.8 Volt operation
o P1dB 28 dBm @f=465MHz
o Power gain 10 dB @f=465MHz
PIN CONFIGURATION
□ APPLICATIONS
o Hand-held radio equipment in common
emitter class-AB operation in 450 MHz
communication band.
□ MAXIMUM RATINGS
VCBO
Collector-Base Voltage
Open Emitter
VCEO
Collector-Emitter Voltage
Open Base
VEBO
Emitter-Base Voltage
Open Collector
Ic
Collector Current (DC)
PT
Total Power Dissipation
Ts = 60℃ ; note 1
TSTG
Storage Temperature
TJ
Operating Juction Temperature
4
350
8
base
collector
emitter
b
c
V
V
collector
20
3e
4c
PIN NO
SYMBOL
DESCRIPTION
SYMBOL
PARAMETER
CONDITION
VALUE
UNIT
1
2
V
mA
W
℃
-65 ~ 150
150
1
℃
NPN SiGe RF POWER
TRANSISTOR
4
SOT-89
Unit : mm
www.tachyonics.co.kr
-1/6-
Sep-2003
Rev 1.1


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