STD35NF06LT4 datasheet(4/14 Pages) STMICROELECTRONICS

4 / 14 page

Electrical characteristics

STD35NF06L

4/14

Doc ID 7662 Rev 5

Electrical characteristics

(TCASE= 25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 250 µA, VGS =0

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 60 V

VDS = 60 V, TC = 125 °C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 16 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2.5

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 17.5 A

VGS = 4.5 V, ID = 17.5 A

0.014

0.016

0.017

0.020

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

Forward

transconductance

VDS = 15 V, ID = 17.5 A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

1700

305

105

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 30 V, ID = 27.5 A

RG =4.7 Ω VGS = 4.5 V

(see Figure 13)

100

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 48 V, ID = 55 A,

VGS = 4.5 V, RG =4.7 Ω

(see Figure 14)

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