
2-547
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
GND
GND
RF OUT
VCC2
PDET_OUT
VCC3
GND
GND
RF IN
VCC1
12
11
1
2
3
4
5
10
9
8
7
6
Bias
Pwr
Det
RF3300-3
3V 1900MHz LINEAR AMPLIFIER MODULE
• 3V CDMA US-PCS Handsets
• 3V CDMA2000/1X PCS Handsets
• Spread-Spectrum Systems
• Designed for Compatibility with Qualcomm
Chipsets
The RF3300-3 is a high-power, high-efficiency linear
amplifier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in dual-mode
3V CDMA handheld digital cellular equipment, spread-
spectrum
systems,
and
other
applications
in
the
1850MHz to 1910MHz band. The RF3300-3 has a digital
control line for low power application to reduce the cur-
rent drain. The device is self-contained with 50
Ω input
and output that is matched to obtain optimum power, effi-
ciency, and linearity characteristics. This amplifier con-
tains a temperature compensating bias circuit for
improved performance over temperature.
• Single 3V Supply with Internal VREF
• Integrated Power Detector
• 25dB Linear Gain
• 40mA Idle Current (Low Power Mode)
• Temperature Compensating Bias Circuit
• Integrated PA Enable Switch
RF3300-3
3V 1900MHz Linear Amplifier Module
RF3300-3 PCBA
Fully Assembled Evaluation Board
0
Rev A5 030612
NOTES:
Nominal thickness, 1.55
mm.
Note orientation of Pin 1.
Dimensions in mm.
1
7.375 TYP
6.775
6.575 TYP
5.875 TYP
5.075 TYP
4.375 TYP
3.575 TYP
2.875 TYP
2.075 TYP
0.925 TYP
0.000
0.125 TYP
Bottom View
Package Style: Module (6mmx7.5mm)