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MCP73853TIMF Datasheet(PDF) 4 Page - Microchip Technology |
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MCP73853TIMF Datasheet(HTML) 4 Page - Microchip Technology |
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4 / 24 page  MCP73853/55 DS21915A-page 4 2004 Microchip Technology Inc. Charge Termination Charge Termination Current ITERM 3.7 6.5 9.3 mA PROG = OPEN 18 32 46 mA PROG = VSS TA = -5°C to +55°C Automatic Recharge Recharge Threshold Voltage VRTH VREG – 300mV VREG – 200mV VREG – 100mV VVBAT High-to-Low Thermistor Reference - MCP73853 Thermistor Reference Output Voltage VTHREF 2.4752.552.625 V TA = 25°C, VDD = VREG(Typ) + 1V, ITHREF = 0 mA Thermistor Reference Source Current ITHREF 200 — — µA Thermistor Reference Line Regulation |(∆V THREF/ VTHREF)|/∆VDD — 0.05 0.25 %/V VDD = [VREG (Typ) + 1V] to 5.5V Thermistor Reference Load Regulation |∆V THREF/ VTHREF| 0.02 0.10 % ITHREF = 0 mA to 0.20 mA Thermistor Comparator - MCP73853 Upper Trip Threshold VT1 1.18 1.25 1.32 V Upper Trip Point Hysteresis VT1HYS —-50 — mV Lower Trip Threshold VT2 0.59 0.62 0.66 V Lower Trip Point Hysteresis VT2HYS —80 — mV Input Bias Current IBIAS —— 2 µA Status Indicator – STAT1, STAT2 Sink Current ISINK 48 12 mA Low Output Voltage VOL — 200 400 mV ISINK = 1 mA Input Leakage Current ILK —0.01 1 µAI SINK = 0 mA, VSTAT1,2 = 5.5V Enable Input Input High Voltage Level VIH 1.4 — — V Input Low Voltage Level VIL —— 0.8 V Input Leakage Current ILK —0.01 1 µAV ENABLE = 5.5V Thermal Shutdown Die Temperature TSD —155 — °C Die Temperature Hysteresis TSDHYS —10 — °C DC CHARACTERISTICS (Continued) Electrical Specifications: Unless otherwise indicated, all limits apply for VDD = [VREG(Typ) + 0.3V] to 5.5V, TA = -40°C to 85°C. Typical values are at +25°C, VDD = [VREG (Typ) + 1.0V] Parameters Sym Min Typ Max Units Conditions |
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