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P185N55 Datasheet(PDF) 1 Page - STMicroelectronics |
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P185N55 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() TARGET SPECIFICATION This is preliminary information on a new product foreseen to be developed. Details are subject to change without notice. August 2006 Rev 3 1/12 12 STB185N55 STP185N55 N-channel 55V - 2.9m Ω - 120A - D2PAK/TO-220 MDmesh™ low voltage Power MOSFET General features ■ Ultra low on-resistance ■ 100% avalanche tested Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “single feature size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and low gate charge. Applications ■ Switching application – Automotive Internal schematic diagram Type VDSS RDS(on) ID STB185N55 55V 3.5m Ω 120A(1) 1. Value limited by wire bonding STP185N55 55V 3.8m Ω 120A(1) D2PAK 1 3 TO-220 1 2 3 www.st.com Order codes Part number Marking Package Packaging STB185N55 B185N55 D2PAK Tape & reel STP185N55 P185N55 TO-220 Tube |
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