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74HC1G86 Datasheet(PDF) 2 Page - NXP Semiconductors

Part # 74HC1G86
Description  2-input EXCLUSIVE-OR gate
PDF  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74HC1G86 Datasheet(HTML) 2 Page - NXP Semiconductors

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1998 Aug 05
2
Philips Semiconductors
Product specification
2-input EXCLUSIVE-OR gate
74HC1G86;
74HCT1G86
FEATURES
• Wide operating voltage range:
2.0 to 6.0 V
• Symmetrical output impedance
• High noise immunity
• Low power dissipation
• Balanced propagation delays
• Very small 5 pins package
• Output capability: standard.
DESCRIPTION
The 74HC1G/HCT1G86 is a
high-speed Si-gate CMOS device.
The 74HC1G/HCT1G86 provides the
2-input EXCLUSIVE-OR function.
The standard output currents are 1
⁄2
compared to the 74HC/HCT86.
FUNCTION TABLE
See note 1.
Note
1. H = HIGH voltage level;
L = LOW voltage level.
INPUTS
OUTPUT
inA
inB
outY
LL
L
LH
H
HL
H
HH
L
QUICK REFERENCE DATA
GND = 0 V; Tamb =25 °C; tr =tf = 6.0 ns.
Notes
1. CPD is used to determine the dynamic power dissipation (PD in µW).
PD =CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in V;
∑ (CL × VCC2 × fo) = sum of outputs.
2. For HC1G the condition is VI = GND to VCC;
For HCT1G the condition is VI = GND to VCC − 1.5 V.
PINNING
SYMBOL
PARAMETER
CONDITIONS
TYP.
UNIT
HC1G
HCT1G
tPHL/ tPLH
propagation delay
inA, inB to outY
CL =15pF
VCC =5V
910
ns
CI
input capacitance
1.5
1.5
pF
CPD
power dissipation
capacitance
notes 1 and 2
23
23
pF
PIN
SYMBOL
DESCRIPTION
1 and 2
inB, inA
data inputs
3
GND
ground (0 V)
4
outY
data output
5VCC
DC supply voltage



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