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STGF7NC60HD Datasheet(PDF) 4 Page - STMicroelectronics |
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STGF7NC60HD Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 22 page ![]() Electrical characteristics STGB7NC60HD, STGF7NC60HD, STGP7NC60HD 4/22 Doc ID 10042 Rev 10 2 Electrical characteristics TCASE = 25°C unless otherwise specified. Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage IC = 1 mA, VGE = 0 600 V ICES Collector cut-off current (VGE = 0) VCE = 600 V VCE = 600 V, TC = 125 °C 10 1 µA mA IGES Gate-emitter leakage current (VCE = 0) VGE = ± 20 V ±100 nA VGE(th) Gate threshold voltage VCE = VGE, IC = 250 µA 3.75 5.75 V VCE(sat) Collector-emitter saturation voltage VGE = 15V, IC = 7 A VGE = 15V, IC = 7 A, TC= 125°C 1.85 1.7 2.5 V V Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: Pulse duration= 300 µs, duty cycle 1.5% Forward transconductance VCE = 15 V , IC = 7 A 4.30S Cies Input capacitance VCE = 25 V, f = 1 MHz, VGE = 0 720 pF Coes Output capacitance 81 pF Cres Reverse transfer capacitance 17 pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 390 V, IC = 7 A, VGE = 15 V 35 7 16 48 nC nC nC ICL Turn-off SOA minimum current Vclamp = 480 V , Tj =150°C RG = 10 Ω, VGE = 15 V 50 A Table 6. Switching on Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 390 V, IC = 7 A RG =10 Ω, VGE = 15V (see Figure 21) - 18.5 8.5 1060 - ns ns A/µs td(on) tr (di/dt)on Turn-on delay time Current rise time Turn-on current slope VCC = 390 V, IC = 7 A RG =10 Ω, VGE = 15V, Tj = 125°C (see Figure 21) 18.5 7 1000 ns ns A/µs |
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