STGP10NC60KD datasheet(3/30 Pages) STMICROELECTRONICS

3 / 30 page

STGB10NC60KDT4, STGD10NC60KDT4,

STGF10NC60KD, STGP10NC60KD

Electrical ratings

DocID11423 Rev 7

3/30

Electrical ratings

Table 2: Absolute maximum ratings

Symbo

Parameter

Value

Unit

D²PAK,

TO-220

DPAK

TO-220FP

VCES

Collector-emitter voltage (VGE = 0 V)

600

IC(1)

Continuous collector current at TC = 25 °C

Continuous collector current at TC = 100 °C

ICL(2)

Turn-off latching current

ICP(3)

Pulsed collector current

VGE

Gate-emitter voltage

±20

Diode RMS forward current at Tc=25°C

IFSM

Surge non repetitive forward current tp = 10

ms sinusoidal

PTOT

Total dissipation at TC = 25 °C

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t=1 s;TC=25 °C)

2500

tscw

Short-circuit withstand time VCE = 0.5 VCES,

Tj = 125 °C, RG

= 10 Ω, VGE = 12 V

μs

Tstg

Storage temperature range

- 55 to 150

°C

Operating junction temperature range

Notes:

(1)Calculated according to the iterative formula:

(2)Vclamp = 80 % VCES, VGE = 15 V, RG = 10 Ω, TJ = 150 °C.

(3)Pulse width limited by maximum junction temperature and turn-off within RBSOA.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

TO-220, D²PAK

DPAK

TO-220FP

Rthj-case

Thermal resistance junction-case IGBT

1.9

°C/W

Rthj-case

Thermal resistance junction-case diode

4.5

Rthj-amb

Thermal resistance junction-ambient

62.5

100

62.5

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