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IPN1M50T-H Datasheet(PDF) 9 Page - STMicroelectronics

Part # IPN1M50T-H
Description  SLLIMM-nano IPM, 3-phase inverter, 1 A, 3.6 Ω max., 500 V MOSFET
PDF  23 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

IPN1M50T-H Datasheet(HTML) 9 Page - STMicroelectronics

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3.2
Control part
(VCC = 15 V unless otherwise specified).
Table 8. Low voltage power supply
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VCC_hys
VCC UV hysteresis
1.2
1.5
1.8
V
VCC_thON
VCC UV turn ON threshold
11.5
12
12.5
V
VCC_thOFF
VCC UV turn OFF threshold
10
10.5
11
V
Iqccu
Undervoltage quiescent supply
current
VCC = 15 V, T/SD/OD = 5 V, LIN = 0 V,
HIN = 0 V, CIN = 0 V
150
µA
Iqcc
Quiescent current
VCC = 15 V, T/SD/OD = 5 V, LIN = 0 V,
HIN = 0 V, CIN = 0 V
1
mA
Vref
Internal comparator (CIN)
reference voltage
0.5
0.54
0.58
V
Table 9. Bootstrapped voltage
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VBS_hys
VBS UV hysteresis
1.2
1.5
1.8
V
VBS_thON
VBS UV turn-ON threshold
11.1
11.5
12.1
V
VBS_thOFF
VBS UV turn-OFF threshold
9.8
10
10.6
V
IQBSU
Undervoltage VBS quiescent
current
VBS < 9 V, T/SD/OD = 5 V,
LIN = 0 V and HIN = 5 V, CIN = 0 V
70
110
µA
IQBS
VBS quiescent current
VBS = 15 V, T/SD/OD = 5 V,
LIN = 0 V and HIN = 5 V, CIN = 0 V
200
300
µA
RDS(on)
Bootstrap driver on-resistance
LVG ON
120
Ω
Table 10. Logic inputs
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Vil
Low logic level voltage
0.8
V
Vih
High logic level voltage
2.25
V
IHINh
HIN logic “1” input bias current
HIN = 15 V
20
40
100
µA
IHINI
HIN logic “0” input bias current
HIN = 0 V
1
µA
ILINh
LIN logic “1” input bias current
LIN = 15 V
20
40
100
µA
ILINI
LIN logic “0” input bias current
LIN = 0 V
1
µA
ISDh
SD logic “0” input bias current
SD = 15 V
200
350
500
µA
ISDI
SD logic “1” input bias current
SD = 0 V
3
µA
Dt
Dead time
(see Figure 9. Dead time and interlocking
waveform definitions)
180
ns
STIPN1M50T-H
Control part
DS11494 - Rev 6
page 9/23



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