SQJ208EP

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Vishay Siliconix

S19-0037-Rev. B, 21-Jan-2019

3

Document Number: 77836

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width

 300 μs, duty cycle  2 %

b. Guaranteed by design, not subject to production testing

c. Independent of operating temperature

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

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Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

Dynamic b

Turn-on delay time c

td(on)

VDD = 20 V, RL = 20 ,

ID  1 A, VGEN = 10 V, Rg = 1 

N-Ch 1

-

10

20

ns

VDD = 20 V, RL = 20 ,

ID  1 A, VGEN = 10 V, Rg = 1 

N-Ch 2

-

14

25

Rise time c

tr

VDD = 20 V, RL = 20 ,

ID  1 A, VGEN = 10 V, Rg = 1 

N-Ch 1

-

4

10

VDD = 20 V, RL = 20 ,

ID  1 A, VGEN = 10 V, Rg = 1 

N-Ch 2

-

5

10

Turn-off delay time c

td(off)

VDD = 20 V, RL = 20 ,

ID  1 A, VGEN = 10 V, Rg = 1 

N-Ch 1

-

24

50

VDD = 20 V, RL = 20 ,

ID  1 A, VGEN = 10 V, Rg = 1 

N-Ch 2

-

35

55

Fall time c

tf

VDD = 20 V, RL = 20 ,

ID  1 A, VGEN = 10 V, Rg = 1 

N-Ch 1

-

25

50

VDD = 20 V, RL = 20 ,

ID  1 A, VGEN = 10 V, Rg = 1 

N-Ch 2

-

57

90

Source-Drain Diode Ratings and Characteristics b

Pulsed current a

ISM

N-Ch 1

-

-

80

A

N-Ch 2

-

-

220

Forward voltage

VSD

IF = 6 A, VGS = 0 V

N-Ch 1

-

0.77

1.2

V

IF = 10 A, VGS = 0 V

N-Ch 2

-

0.76

1.2

Body diode reverse recovery time

trr

IF = 1 A, di/dt = 100 A/μs

N-Ch 1

-

28

60

ns

IF = 1 A, di/dt = 100 A/μs

N-Ch 2

-

39

80

Body diode reverse recovery charge

Qrr

IF = 1 A, di/dt = 100 A/μs

N-Ch 1

-

17

35

nC

IF = 1 A, di/dt = 100 A/μs

N-Ch 2

-

46

95

Reverse recovery fall time

ta

IF = 1 A, di/dt = 100 A/μs

N-Ch 1

-

14

-

ns

IF = 1 A, di/dt = 100 A/μs

N-Ch 2

-

23

-

Reverse recovery rise time

tb

IF = 1 A, di/dt = 100 A/μs

N-Ch 1

-

14

-

IF = 1 A, di/dt = 100 A/μs

N-Ch 2

-

16

-

Body diode peak reverse recovery

current

IRM(REC)

IF = 1 A, di/dt = 100 A/μs

N-Ch 1

-

-1.1

-

A

IF = 1 A, di/dt = 100 A/μs

N-Ch 2

-

-2.1

-

SPECIFICATIONS (TC = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT