L99DZ100G datasheet(45/197 Pages) STMICROELECTRONICS

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DS11546 Rev 5

45/197

L99DZ100G, L99DZ100GP

Electrical specifications

196

3.4.15

Gate drivers for the external Power-MOS switching times

The voltages are referred to power ground and currents are assumed positive, when the

current flows into the pin. 6 V ≤ VS ≤ 28 V; 6 V ≤ VSREG ≤ 28 V; Tj = -40 °C to 150 °C, unless

otherwise specified.

Table 21. Gate drivers for the external Power-MOS switching times

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

TG(HL)xHL

Propagation delay time high to low

(switch mode(1)

VS = 13.5 V; VSHx = 0;

RG = 0 Ω; CG = 2.7 nF

1.5

µs

TG(HL)xLH

Propagation delay time low to high

(switch mode)(1)

VS = 13.5 V; VSLx = 0;

RG = 0 Ω; CG = 2.7 nF

1.5

µs

IGHxrmax

Maximum source current (current

mode)

VS = 13.5 V; VSHx = 0;

VGHx = 1 V;

SLEW<4:0> = 1 FH

IGHxfmax

Maximum sink current (current

mode)

VS = 13.5 V, VSHx = 0;

VGHx = 2 V;

SLEW<4:0> = 1 FH

dIIGHxr

Source current accuracy

VS = 13.5 V; VSHx = 0;

VGHx = 1 V

See Figure 12: IGHxr

ranges

dIIGHxf

Sink current accuracy

VS = 13.5 V; VSHx = 0;

VGHx = 2 V

See Figure 13: IGHxf

ranges

VDSHxrSW

Switching voltage (VS-VSH)

between current mode and switch

mode (rising)

VS = 13.5 V

2.8

VDSHxfSW

Switching voltage (VS-VSH)

between switch mode and current

mode (falling)

VS = 13.5 V

2.8

t0GHxr

Rise time (switch mode)

VS = 13.5 V; VSHx = 0;

RG = 0 Ω; CG = 2.7 nF

t0GHxf

Fall time (switch mode)

VS = 13.5 V; VSHx = 0;

RG = 0 Ω; CG = 2.7 nF

t0GLxr

Rise time

VS = 13.5 V; VSLx = 0;

RG = 0 Ω; CG = 2.7 nF

t0GLxf

Fall time

VS = 13.5 V; VSLx = 0;

RG = 0 Ω; CG = 2.7 nF

tccp0001

Programmable cross-current

protection time

500

tccp0010

Programmable cross-current

protection time

750

tccp0011

Programmable cross-current

protection time

1000

tccp0100

Programmable cross-current

protection time

1250

tccp0101

Programmable cross-current

protection time

1500

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