STN1N20 datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STN1N20

4/12

Doc ID 6772 Rev 3

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 5.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

(VGS = 0)

ID = 250 µA

200

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating, TC=125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

±100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 0.5 A

1.2

1.5

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward

transconductance

VDS > ID(on) x RDS(on)max,

ID = 0.5 A

-2.7

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

206

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 160 V, ID = 4 A,

VGS = 10 V

(see

Figure 14)

2.8

15.7

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 160 V, ID = 4 A,

RG = 4.7 Ω, VGS = 10 V

(see

Figure 13)

Obsolete

Product(s)

- Obsolete

Product(s)

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